NEW Pseudo SRAM Product Line |
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Supporting Data Sheets |
IntroductionThe 4Mb IS66WV25616BLL and the 8Mb
IS66WV51216BLL Pseudo SRAMs, are the first members of ISSI’s new Pseudo
SRAM product line. The Pseudo SRAM combines the most desirable features of SRAM
and DRAM to provide designers an easy to use, low power, cost effective memory
solution. With a pinout that is identical to regular 4Mb and 8Mb low power
SRAMs these Pseudo SRAMs are drop in replacements for 4Mb and 8Mb
SRAMs.
The IS66WV25616BLL and the IS66WV51216BLL are organized as
256Kx16 and 512Kx16 respectively, with access times as fast as 55ns and typical
operating current of only 15mA. ISSI’s Pseudo SRAMs are fabricated on 0.14
micron DRAM technology and are available in commercial 0ºC to +70ºC
and industrial -40ºC to +85ºC temperature ranges. Both 1.8V and 3.0V
operating voltage versions are available.
This new Pseudo SRAM product
line is targeted for low power consumer, industrial, automotive, networking and
telecom applications where a lower cost solution is required and a higher
standby current can be accommodated. |
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