NEW Pseudo SRAM Product Line

Supporting Data Sheets


The 4Mb IS66WV25616BLL and the 8Mb IS66WV51216BLL Pseudo SRAMs, are the first members of ISSI’s new Pseudo SRAM product line. The Pseudo SRAM combines the most desirable features of SRAM and DRAM to provide designers an easy to use, low power, cost effective memory solution. With a pinout that is identical to regular 4Mb and 8Mb low power SRAMs these Pseudo SRAMs are drop in replacements for 4Mb and 8Mb SRAMs.

The IS66WV25616BLL and the IS66WV51216BLL are organized as 256Kx16 and 512Kx16 respectively, with access times as fast as 55ns and typical operating current of only 15mA. ISSI’s Pseudo SRAMs are fabricated on 0.14 micron DRAM technology and are available in commercial 0ºC to +70ºC and industrial -40ºC to +85ºC temperature ranges. Both 1.8V and 3.0V operating voltage versions are available.

This new Pseudo SRAM product line is targeted for low power consumer, industrial, automotive, networking and telecom applications where a lower cost solution is required and a higher standby current can be accommodated.

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Contact Information
Integrated Silicon Solution, Inc.
1940 Zanker Road, San Jose, CA 95112-4216
Tel: (408) 969-6600 Fax: (408) 969-7800
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Last Updated: 06/03/2008
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